Theoretical and experimental studies of cyclotron resonance in p-type InAs and InMnAs at ultrahigh magnetic fields
Identifieur interne : 00C358 ( Main/Repository ); précédent : 00C357; suivant : 00C359Theoretical and experimental studies of cyclotron resonance in p-type InAs and InMnAs at ultrahigh magnetic fields
Auteurs : RBID : Pascal:03-0232023Descripteurs français
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- 7640, 7550P, 7520C, 7170G, 7510L, Etude expérimentale, Etude théorique, Indium composé, Semiconducteur III-V, Manganèse composé, Résonance cyclotronique, Matériau paramagnétique, Interaction échange électron, Largeur raie, Densité trou, Modèle bande magnétisme, Semiconducteur semimagnétique, Semiconducteur bande interdite étroite.
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Abstract
We report theoretical and experimental ultrahigh magnetic field cyclotron resonance (CR) studies of paramagnetic p-type InAs and InMnAs. Experimental results are compared with an 8 band Pidgeon-Brown model which includes (i) the wave vector dependence of the electronic states along the magnetic field, and (ii) s-d and p-d exchange interactions with Mn ions. CR spectra are computed using Fermis golden rule. Results show two strong peaks associated with heavy and light hole transitions. Line shapes of the transitions provide information on the carrier densities. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Theoretical and experimental studies of cyclotron resonance in p-type InAs and InMnAs at ultrahigh magnetic fields</title><author><name sortKey="Sanders, G D" uniqKey="Sanders G">G. D. Sanders</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Florida, Gainesville, Florida 32611-8440</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Physics, University of Florida, Gainesville</wicri:cityArea></affiliation></author><author><name sortKey="Sun, Y" uniqKey="Sun Y">Y. Sun</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Florida, Gainesville, Florida 32611-8440</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Physics, University of Florida, Gainesville</wicri:cityArea></affiliation></author><author><name sortKey="Stanton, C J" uniqKey="Stanton C">C. J. Stanton</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Florida, Gainesville, Florida 32611-8440</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Physics, University of Florida, Gainesville</wicri:cityArea></affiliation></author><author><name sortKey="Khodaparast, G A" uniqKey="Khodaparast G">G. A. Khodaparast</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, Rice University, Houston</wicri:cityArea></affiliation></author><author><name sortKey="Kono, J" uniqKey="Kono J">J. Kono</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, Rice University, Houston</wicri:cityArea></affiliation></author><author><name sortKey="Matsuda, Y H" uniqKey="Matsuda Y">Y. H. Matsuda</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581</wicri:regionArea><wicri:noRegion>Chiba 277-8581</wicri:noRegion></affiliation></author><author><name sortKey="Miura, N" uniqKey="Miura N">N. Miura</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581</wicri:regionArea><wicri:noRegion>Chiba 277-8581</wicri:noRegion></affiliation></author><author><name sortKey="Slupinski, T" uniqKey="Slupinski T">T. Slupinski</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503</wicri:regionArea><wicri:noRegion>Kanagawa 226-8503</wicri:noRegion></affiliation></author><author><name sortKey="Oiwa, A" uniqKey="Oiwa A">A. Oiwa</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503</wicri:regionArea><wicri:noRegion>Kanagawa 226-8503</wicri:noRegion></affiliation></author><author><name sortKey="Munekata, H" uniqKey="Munekata H">H. Munekata</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503</wicri:regionArea><wicri:noRegion>Kanagawa 226-8503</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0232023</idno><date when="2003-05-15">2003-05-15</date><idno type="stanalyst">PASCAL 03-0232023 AIP</idno><idno type="RBID">Pascal:03-0232023</idno><idno type="wicri:Area/Main/Corpus">00D572</idno><idno type="wicri:Area/Main/Repository">00C358</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Band model of magnetism</term><term>Cyclotron resonance</term><term>Exchange interactions (electron)</term><term>Experimental study</term><term>Hole density</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Line widths</term><term>Manganese compounds</term><term>Narrow band gap semiconductors</term><term>Paramagnetic materials</term><term>Semimagnetic semiconductors</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7640</term><term>7550P</term><term>7520C</term><term>7170G</term><term>7510L</term><term>Etude expérimentale</term><term>Etude théorique</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Manganèse composé</term><term>Résonance cyclotronique</term><term>Matériau paramagnétique</term><term>Interaction échange électron</term><term>Largeur raie</term><term>Densité trou</term><term>Modèle bande magnétisme</term><term>Semiconducteur semimagnétique</term><term>Semiconducteur bande interdite étroite</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report theoretical and experimental ultrahigh magnetic field cyclotron resonance (CR) studies of paramagnetic p-type InAs and InMnAs. Experimental results are compared with an 8 band Pidgeon-Brown model which includes (i) the wave vector dependence of the electronic states along the magnetic field, and (ii) s-d and p-d exchange interactions with Mn ions. CR spectra are computed using Fermis golden rule. Results show two strong peaks associated with heavy and light hole transitions. Line shapes of the transitions provide information on the carrier densities. © 2003 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>93</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Theoretical and experimental studies of cyclotron resonance in p-type InAs and InMnAs at ultrahigh magnetic fields</s1></fA08><fA11 i1="01" i2="1"><s1>SANDERS (G. D.)</s1></fA11><fA11 i1="02" i2="1"><s1>SUN (Y.)</s1></fA11><fA11 i1="03" i2="1"><s1>STANTON (C. J.)</s1></fA11><fA11 i1="04" i2="1"><s1>KHODAPARAST (G. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>KONO (J.)</s1></fA11><fA11 i1="06" i2="1"><s1>MATSUDA (Y. H.)</s1></fA11><fA11 i1="07" i2="1"><s1>MIURA (N.)</s1></fA11><fA11 i1="08" i2="1"><s1>SLUPINSKI (T.)</s1></fA11><fA11 i1="09" i2="1"><s1>OIWA (A.)</s1></fA11><fA11 i1="10" i2="1"><s1>MUNEKATA (H.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, University of Florida, Gainesville, Florida 32611-8440</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA20><s1>6897-6899</s1></fA20><fA21><s1>2003-05-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0232023</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report theoretical and experimental ultrahigh magnetic field cyclotron resonance (CR) studies of paramagnetic p-type InAs and InMnAs. Experimental results are compared with an 8 band Pidgeon-Brown model which includes (i) the wave vector dependence of the electronic states along the magnetic field, and (ii) s-d and p-d exchange interactions with Mn ions. CR spectra are computed using Fermis golden rule. Results show two strong peaks associated with heavy and light hole transitions. 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